Tabletop Fabrication of High-Performance MoS2 Field-Effect Transistors
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Updated: Sep 6, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Ungrae Cho1, Seokjin Kim1, Chang Yeop Shin1
1Department of Applied Chemistry, Andong National University (ANU), 1375 Gyeongdong-ro, Andong 36729, Gyeongbuk, Republic of Korea.
Abstract:
A simple way to prepare field-effect transistors (FETs) using MoS2 on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS2 as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without damage. The final performance is comparable to that of the SiO2-backgated devices prepared by lithography and metal evaporators. The role of the silver paste and heat treatment in vacuum is investigated by device and spectroscopic analysis.
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