Transport properties of MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions tuned by bias and gate voltages
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Updated: Sep 6, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Hong Yu1, Danting Li1, Yan Shang1
1School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China guiling-002@163.com yanhong204821@aliyun.com.
Abstract:
The MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions are designed and the transport properties of their four-terminal devices are comparatively investigated based on density functional theory (DFT) and the nonequilibrium Green's function (NEGF) technique. The MoS2 and graphene nanoribbons act as the source-to-drain channel and the spin-polarized one-dimensional (1D) benzene-V multidecker complex nanowire (V7(Bz)8) serves as the gate channel. Gate voltages applied on V7(Bz)8 exert different influences of electron transport on MoS2/V7(Bz)8 and graphene/V7(Bz)8. In MoS2/V7(Bz)8, the interplay of source and gate bias potentials could induce promising properties such as negative differential resistance (NDR) behavior, output/input current switching, and spin-polarized currents. In contrast, the gate bias plays an insignificant effect on the transport along graphene in graphene/V7(Bz)8. This dissimilarity is attributed to the fact that the conductivity follows the sequence of MoS2 < V7(Bz)8 < graphene. These transport characteristics are examined by analyzing the conductivity, the currents, the local density of states (LDOS), and the transmission spectra. These results are valuable in designing multi-terminal nanoelectronic devices.
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