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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

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Fast Near-Infrared Photodetection Using III-V Colloidal Quantum Dots.

Bin Sun¹, Amin Morteza Najarian¹, Laxmi Kishore Sagar¹

¹Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 1A4, Canada.

Advanced Materials (Deerfield Beach, Fla.)

|June 29, 2022

Summary

This summary is machine-generated.

Researchers developed new indium arsenide (InAs) colloidal quantum dots (CQDs) for faster infrared (IR) light detection. These CQDs achieve a record response time under 2 nanoseconds, surpassing previous CQD photodiode speeds.

Keywords:

fast photodetectors heavy-metal free near-infrared photodiodes quantum dots

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Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

Colloidal quantum dots (CQDs) offer tunable bandgaps for infrared (IR) light detection.
Current CQD photodiode response times lag behind silicon (Si) and indium gallium arsenide (InGaAs).
High permittivity in II-VI CQDs causes slow charge extraction, while III-V materials present challenges in surface chemistry control.

Purpose of the Study:

To investigate the potential of III-V CQDs, specifically indium arsenide (InAs), for high-speed IR photodetection.
To overcome limitations in InAs CQD charge transport caused by surface defects and doping.
To develop a surface management strategy for InAs CQDs to enhance their optoelectronic properties.

Main Methods:

Employing amphoteric ligand coordination for surface management of InAs CQDs.
Addressing both indium (In) and arsenic (As) surface dangling bonds simultaneously.
Fabricating and characterizing InAs CQD photodiodes.

Main Results:

Achieved InAs CQD solids with high charge carrier mobility (0.04 cm² V^-1 s^-1).
Reduced permittivity by 4× compared to lead sulfide (PbS) CQDs.
Demonstrated photodiodes with a response time faster than 2 nanoseconds (ns).
Obtained an external quantum efficiency (EQE) of 30% at 940 nm.

Conclusions:

Amphoteric ligand coordination effectively passivates InAs CQD surfaces, enabling balanced charge transport.
The developed InAs CQDs exhibit significantly lower permittivity, facilitating faster charge extraction.
These findings establish a new benchmark for CQD photodiode speed, paving the way for high-performance IR detectors.