Related Experiment Video
Updated: Sep 6, 2025

11:07
Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties
Published on: August 15, 2015
10.0K
Efficient Si Doping Promoting Thermoelectric Performance of Yb-Filled CoSb3-Based Skutterudites
Dandan Qin1,2, Wenjing Shi2, Yunzhuo Lu1
1School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China.
ACS Applied Materials & Interfaces
|June 29, 2022
Summary
Silicon doping in Yb$_{0.3}$Co$_{4}$Sb$_{12}$ nanocomposites introduced CoSi nanoparticles. This strategy enhanced thermoelectric performance, achieving a peak ZT value of 1.37 at 823 K.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Nanocomposites are crucial for enhancing thermoelectric materials.
- Filled skutterudites, like Yb$_{0.3}$Co$_{4}$Sb$_{12}$, show promise for thermoelectric applications.
- Optimizing thermoelectric performance requires careful material design.
Purpose of the Study:
- To investigate the effect of silicon (Si) doping on the thermoelectric properties of Yb$_{0.3}$Co$_{4}$Sb$_{12}$ nanocomposites.
- To understand the role of in-situ precipitated CoSi nanoparticles in influencing thermoelectric performance.
- To evaluate the overall thermoelectric figure of merit (ZT) enhancement.
Main Methods:
- Synthesis of Yb$_{0.3}$Co$_{4}$Sb$_{12}$ nanocomposites with varying Si doping levels.
- Characterization of the microstructure and phase composition, including the formation of CoSi nanoparticles.
- Measurement of thermoelectric transport properties (Seebeck coefficient, electrical conductivity, thermal conductivity) as a function of temperature.
- Calculation of the thermoelectric figure of merit (ZT).
Main Results:
- Si doping led to the in-situ precipitation of CoSi nanoparticles and a reduced Yb filling fraction.
- CoSi nanoparticles enhanced the power factor and reduced electronic thermal conductivity.
- CoSi nanoparticles effectively scattered phonons, mitigating increased lattice thermal conductivity.
- Despite adverse effects from YbSb$_{2}$ phases, a peak ZT of 1.37 at 823 K was achieved.
- The average ZT (ZT$_{ave}$) increased by 21% for the Yb$_{0.3}$Co$_{4}$Sb$_{12}$/0.1Si sample.
Conclusions:
- Silicon doping is an effective strategy to enhance the thermoelectric performance of Yb$_{0.3}$Co$_{4}$Sb$_{12}$ nanocomposites.
- The synergistic effects of CoSi nanoparticles and controlled carrier concentration are key to improved thermoelectric efficiency.
- The developed nanocomposites demonstrate significant potential for waste heat recovery applications.
More Related Videos
Related Concept Videos
Types of Semiconductors
907
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
907
Schottky Barrier Diode
478
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
478

