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Updated: Sep 6, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Seong-Jun Yang1,2, Min-Yeong Choi1,2, Cheol-Joo Kim1,2
1Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea.
Engineering the boundaries of 2D materials allows for property tuning and advanced devices. Current techniques face challenges in reproducibility and scalability for widespread application.
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