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Related Concept Videos

P-N junction01:11

P-N junction

670
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
670
Biasing of P-N Junction01:16

Biasing of P-N Junction

805
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
805
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

783
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
783
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

330
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
330

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Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics.

Jonatan Fast1, Yen-Po Liu2, Yang Chen1

  • 1NanoLund and Division of Solid State Physics, Lund University, Box 118, Lund 22100, Sweden.

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|July 5, 2022
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Summary
This summary is machine-generated.

Hot-carrier extraction in nanowire devices shows potential for advanced optoelectronics. Optical-beam-induced current mapping reveals efficient hot-electron extraction within 300 nm of the energy barrier, crucial for device optimization.

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Area of Science:

  • Optoelectronics
  • Semiconductor Nanowires
  • Energy Conversion

Background:

  • Hot carriers, with energy above the band edge, offer potential for exceeding theoretical limits in photovoltaics and photodetectors.
  • Semiconducting nanowires, particularly InAs, are promising platforms for hot-carrier extraction, with InP segments acting as energy filters.
  • Understanding carrier dynamics (separation, relaxation, recombination) relative to device design and excitation location is critical for optimizing hot-carrier devices.

Purpose of the Study:

  • To investigate the optoelectronic performance of InAs/InP nanowire devices using a spatially resolved characterization method.
  • To determine the dependence of hot-carrier extraction efficiency on the location of optical excitation.
  • To model and understand the mechanisms of hot-electron transport and extraction in the nanowire device.

Main Methods:

  • Utilized optical-beam-induced current (OBIC) microscopy with a diffraction-limited laser spot and a high-precision piezo stage.
  • Performed spatially resolved photocurrent measurements to map the device's response to localized optical excitation.
  • Developed and employed modeling based on hot-electron diffusion for photocurrent analysis.

Main Results:

  • Demonstrated that the nanowire device can generate power through hot-carrier extraction.
  • Identified a spatial region of approximately 300 nm from the InP barrier where significant hot-electron extraction occurs.
  • Photocurrent modeling based on diffusion accurately reproduced the experimental observations.
  • Observed variations in extracted hot-electron diffusion lengths when compared to similar experimental systems.

Conclusions:

  • The study confirms the feasibility of hot-electron extraction in InAs/InP nanowire devices for optoelectronic applications.
  • Spatially resolved OBIC is an effective technique for characterizing and optimizing such devices.
  • Precise control over excitation parameters and device design is essential for realizing the theoretical performance limits of hot-carrier systems.