Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Anti-cancer therapy and the exacerbation of pulmonary nontuberculous mycobacterial infection.

Respiratory investigation·2026

Same author

Nintedanib enhances the antitumor efficacy of pd-1 blockade, potentially through inhibition of myeloid-derived suppressor cells and cancer-associated fibroblasts.

Cancer immunology, immunotherapy : CII·2026

Same author

Successful treatment with tepotinib followed by pembrolizumab in pulmonary pleomorphic carcinoma harbouring a <i>MET</i> exon 14 skipping mutation: A case report.

Oncology letters·2026

Same author

Realization of Iodinene with Tunable Topological Edge States and Flat Bands.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

Itinerant to Localized Heavy Electron Magnetism in Ce(Ru_{1-x}Rh_{x})_{2}Al_{10}: A Direction-Dependent Phase Diagram beyond the Doniach Phase Diagram.

Physical review letters·2026

Same author

Drug-Induced Liver Injury with Eosinophilia: A Case-Control Study Using Electronic Medical Records.

Biological & pharmaceutical bulletin·2026

Search research articles

Related Experiment Video

Updated: Sep 5, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Double gate operation of metal nanodot array based single electron device.

Takayuki Gyakushi¹, Ikuma Amano², Atsushi Tsurumaki-Fukuchi²

¹Graduate School of Information Science and Technology, Hokkaido University, Sapporo, 060-0814, Japan. gyakushi.takayuki.d8@elms.hokudai.ac.jp.

Scientific Reports

|July 6, 2022

Summary

Researchers explored iron nanodot arrays for advanced computing. They demonstrated that dual gates can control single-electron properties in these complex structures, paving the way for functional multidot devices.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Related Experiment Videos

Last Updated: Sep 5, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Area of Science:

Materials Science
Nanotechnology
Condensed Matter Physics

Background:

Multidot single-electron devices (SEDs) offer potential for reconfigurable and reservoir computing.
Self-assembled metal nanodot arrays with multiple gates are promising for high-functionality SEDs.
Investigating single-electron properties in complex nanodot arrays with controlled gates remains a challenge.

Purpose of the Study:

To fabricate and investigate the single-electron properties of iron (Fe) nanodot-array-based double-gate SEDs.
To understand how top and bottom gate voltages modulate the Coulomb blockade oscillations in these devices.
To explore the impact of structural complexity on the electronic control of nanodot arrays.

Main Methods:

Fabrication of Fe nanodot-array double-gate SEDs using vacuum deposition.
Experimental investigation of single-electron properties modulated by top (V_T) and bottom (V_B) gate voltages.
Analysis of Coulomb blockade oscillation phase shifts in response to gate voltage variations.

Main Results:

Systematic phase shifts in Coulomb blockade oscillations were observed with changes in V_T, confirming gate control.
Both gate voltages influenced the charge state of individual dots within the random multidot structure.
Uneven gate influence was attributed to geometrical effects: asymmetric dot shape and variations in dot size.

Conclusions:

Coulomb blockade oscillations in multidot arrays can be effectively modulated by dual gates.
Geometrical effects inherent to self-assembled nanodot arrays lead to unique, uneven gate control.
These variations in nanodot arrays can be leveraged to enhance the functionality of multidot devices for advanced computing.