Related Experiment Video
Updated: Sep 5, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
Femtosecond Laser-Assisted Device Engineering: Toward Organic Field-Effect Transistor-Based High-Performance Gas
Li Chen1, Yuzhou Hu2, Huaxi Huang1
1School of Chemistry, Chemical Engineering and Life Science, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Center of Smart Materials and Devices, Wuhan University of Technology, No. 122 Luoshi Road, Wuhan 430070, China.
Abstract:
Organic electronic-based gas sensors hold great potential for portable healthcare- and environment-monitoring applications. It has recently been shown that introducing a porous structure into an organic semiconductor (OSC) film is an efficient way to improve the gas-sensing performance because it facilitates the interaction between the gaseous analyte and the active layer. Although several methods have been used to generate porous structures, the development of a robust approach that can facilely engineer the porous OSC film with a uniform pore pattern remains a challenge. Here, we demonstrate a robust approach to fabricate porous OSC films by using a femtosecond laser-processed porous dielectric layer template. With this laser-assisted strategy, various polymeric OSC layers with controllable pore size and well-defined pore patterns were achieved. The consequent porous p-type polymer-based device exhibits enhanced sensitivity to the ammonia analyte in the range from 100 ppb to 10 ppm with remarkable reproducibility and selectivity. The micropattern of the active layer was precisely controlled by generating various pore densities in the predecorated templates, which results in modulated ammonia sensitivities ranging from 30 to 65% ppm-1. Furthermore, we show that this approach can be used to fabricate flexible gas sensors with enhanced sensing performance and mechanical durability, which indicate that this femtosecond laser-assisted approach is very promising for the fabrication of next-generation wearable electronics.

