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Updated: Sep 5, 2025
11:04
Synthesis of Ionic Liquid Based Electrolytes, Assembly of Li-ion Batteries, and Measurements of Performance at High Temperature
Published on: December 20, 2016
13.1K
High-temperature ionic logic gates composed of an ionic rectifying solid-electrolyte interface
Takashi Nakamura1, Miri Honda2, Yuta Kimura1
1Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1, Katahira, Aoba-Ku Sendai 980-8577 Japan takashi.nakamura.e3@tohoku.ac.jp.
RSC Advances
|July 8, 2022
Summary
Researchers developed high-temperature ionic logic gates using yttria stabilized zirconia (YSZ) and La2NiO4+. These ultra-high temperature information devices function reliably at 1073 K, enabling data collection in extreme environments.
Area of Science:
- Materials Science
- Solid-State Electronics
- High-Temperature Engineering
Background:
- Extreme temperature environments are crucial for industrial technologies like engines and furnaces.
- Current semiconductor devices fail at high temperatures due to thermal carrier excitation.
Purpose of the Study:
- To demonstrate novel ultra-high temperature information devices.
- To overcome limitations of semiconductor devices in extreme thermal conditions.
Main Methods:
- Fabrication of ionic AND and OR logic gates.
- Utilizing yttria stabilized zirconia (YSZ) as an oxide-ion conductor.
- Employing La2NiO4+ as a mixed oxide-ion and electron conductor.
Main Results:
- Successfully demonstrated high-temperature ionic AND and OR logic gates.
- Achieved proper and stable electrical responses at 1073 K (800 °C).
Conclusions:
- Developed robust information devices suitable for extreme environments.
- Ionic logic gates show promise for ultra-high temperature data applications.
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