Photoionization spectroscopy of the SiH free radical in the vacuum-ultraviolet range
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Updated: Sep 5, 2025

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Ning L Chen1, Bérenger Gans1, Sebastian Hartweg2
1Institut des Sciences Moléculaires d'Orsay, CNRS, Université Paris-Saclay, F-91405 Orsay, France.
Abstract:
The first measurement of the photoelectron spectrum of the silylidyne free radical, SiH, is reported between 7 and 10.5 eV. Two main photoionizing transitions involving the neutral ground state, X+1Σ+ ← X2Π and a+3Π ← X2Π, are assigned by using ab initio calculations. The corresponding adiabatic ionization energies are derived, IEad(X+1Σ+) = 7.934(5) eV and IEad(a+3Π) = 10.205(5) eV, in good agreement with our calculated values and the previous determination by Berkowitz et al. [J. Chem. Phys. 86, 1235 (1987)] from a photoionization mass spectrometric study. The photoion yield of SiH recorded in this work exhibits a dense autoionization landscape similar to that observed in the case of the CH free radical [Gans et al., J. Chem. Phys. 144, 204307 (2016)].
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