Related Experiment Video

Updated: Sep 5, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

Reset First Resistive Switching in Ni1-xO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron

Dae-Woo Kim1, Tae-Ho Kim1,2, Jae-Yeon Kim1

  • 1Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.

Nanomaterials (Basel, Switzerland)
|July 9, 2022
PubMed

Keywords:
area dependenceconductivitynickel oxidenickel vacancyoxygen partial pressurereset-first resistive switchingresistive random access memory

More Related Videos

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.9K
Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate08:23

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

Published on: September 28, 2019

7.5K

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
946
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
486
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
502