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Updated: Sep 5, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
O-terminated interface for thickness-insensitive transport properties of aluminum oxide Josephson junctions
Zheng Shan1,2, Xuelian Gou3,4, Huihui Sun5,6
1State Key Laboratory of Mathematical Engineering and Advanced Computing, Zhengzhou, 450001, Henan, China.
Abstract:
Alumina Josephson junction has demonstrated a tremendous potential to realize superconducting qubits. Further progress towards scalable superconducting qubits urgently needs to be guided by novel analysis mechanisms or methods to reduce the thickness sensitivity of the junction critical current to the tunnel barrier. Here, it is first revealed that the termination mode of AlOx interface plays a crucial role in the uniformity of critical current, and we demonstrate that the O-terminated interface has the lowest resistance sensitivity to thickness. More impressively, we developed atomically structured three-dimensional models and calculated their transport properties using a combination of quantum ballistic transport theory with first-principles DFT and NEGF to examine the effects of the Al2O3 termination mode and thickness variations. This work clarifies that O-terminated interface can effectively improve the resistance uniformity of Josephson junction, offering useful guidance for increasing the yield of fixed-frequency multi-qubit quantum chips which require tight control on qubit frequency.
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