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Updated: Sep 5, 2025
Flash Infrared Annealing for Perovskite Solar Cell Processing
Published on: February 3, 2021
Rapid thermal annealing process for Se thin-film solar cells
Liuchong Fu1, Jiajia Zheng1,2, Xuke Yang1
1Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China. kahng@hust.edu.cn.
Abstract:
Recently, selenium (Se) has regained interest as a possible wide-bandgap photovoltaic material for silicon-based tandem applications. However, the easy sublimation of Se below the melting point (220 °C) brings challenges for high-quality Se thin films. Herein, we design a rapid thermal annealing (RTA) method to balance the contradiction between the sublimation and crystallization of Se thin films. Through optimizing the annealing temperature, a high-quality Se thin film is obtained with a large grain size (∼1 μm) and preferred [003] orientation during the RTA process. Then, an optimized efficiency of 3.22% is achieved in a ZnO/Se heterojunction solar cell. This study provides a new guide to obtain high-quality Se thin film by RTA and the method can be extended to other materials with high saturated vapor pressure.
