Related Experiment Video
Updated: Sep 4, 2025

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
Published on: October 5, 2013
Epitaxial growth and electronic properties of an antiferromagnetic semiconducting VI2 monolayer
Xuhan Zhou1,2,3, Zhe Wang4, Han Zhu1,2,3
1School of Physics, Sun Yat-Sen University, Guangzhou 510275, China. houysh@mail.sysu.edu.cn.
Abstract:
The van der Waals materials down to the monolayer (ML) limit provide a fertile platform for exploring low-dimensional magnetism and developing the novel applications of spintronics. Among them, due to the absence of the net magnetic moment, antiferromagnetic (AFM) materials have received much less attention than ferromagnetic ones. Here, by combining scanning tunneling microscopy and state-of-the-art first-principles calculations, we investigate the preparation, and electronic and magnetic properties of a vanadium(II) iodide (VI2) ML. Single-layer VI2 has been grown by molecular beam epitaxy on Au(111) surfaces. A band gap of 2.8 eV is revealed, indicating the semiconducting nature of the VI2 ML. Vanadium and iodine vacancy defects give rise to additional feature states within the bandgap. A typical 120° AFM spin ordering is maintained in the ML limit of VI2, as revealed by the first-principles calculations. Besides, the AFM coupling is greatly enhanced by slightly decreasing lattice constants. Our work provides an ideal platform for further studying two-dimensional magnetism with non-collinear AFM ordering and for investigating the possibility of realizing the spin Hall effect in the ML limit.
More Related Videos
Related Concept Videos
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Types of Semiconductors

