Related Experiment Video
Updated: Sep 4, 2025

11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
15.6K
Cavity-mediated drag in double-layer graphene.
F Escudero1,2, J S Ardenghi1,2
1Departamento de Física, Universidad Nacional del Sur, Av. Alem 1253, B8000 Bahía Blanca, Argentina.
Summary
We discovered a new photon-mediated drag in graphene, distinct from Coulomb drag. This novel interaction, influenced by cavity effects, becomes dominant as layer separation and carrier density increase.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Optics
Background:
- Frictional drag between layered materials is crucial for understanding electron interactions.
- Coulomb drag is the established mechanism for interlayer friction in 2D electron systems.
- Cavity quantum electrodynamics offers new pathways for controlling electron interactions.
Purpose of the Study:
- To investigate the frictional drag mechanisms between two parallel graphene layers within an optical cavity.
- To identify and characterize novel contributions to interlayer drag beyond the conventional Coulomb interaction.
- To explore the influence of cavity-mediated photon interactions on graphene drag properties.
Main Methods:
- Theoretical modeling of electron-electron interactions in bilayer graphene.
- Analysis of Coulomb and photon-mediated drag contributions.
- Investigation of the role of interlayer separation (d) and carrier density (n).
- Consideration of electromagnetic field enhancement within the cavity.
Main Results:
- Identified two distinct drag contributions: Coulomb drag and a novel photon-mediated drag.
- Photon-mediated drag arises from cavity-enhanced interactions with suppressed backscattering and weak screening.
- Photon-mediated drag resistivity shows deviations from the quadratic temperature dependence in the Fermi-liquid regime.
- Observed slow decay of photon-mediated drag with increasing interlayer separation (d) and a 1/n^2 dependence on carrier density (n).
Conclusions:
- Coulomb drag dominates at small interlayer separations and carrier densities.
- A transition to purely photon-mediated drag occurs as d and n increase.
- The onset of this transition is sensitive to the electromagnetic field enhancement within the cavity.
- This work reveals new physics in coupled 2D systems mediated by photonic environments.
Related Concept Videos
Drag
181
Drag is a resistive force opposing an object’s motion through a fluid, resulting from surface pressure and shear forces. It comprises two components: a perpendicular one from pressure and a tangential one from shear stress. Accurate drag calculations use pressure and wall shear stress distributions, often determined through Computational Fluid Dynamics (CFD) or wind tunnel testing. The drag coefficient, a dimensionless measure, depends on factors like shape, Reynolds number, Mach number,...
181
Gauss's Law in Dielectrics
4.6K
Consider a polar dielectric placed in an external field. In such a dielectric, opposite charges on adjacent dipoles neutralize each other, such that the net charge within the dielectric is zero. When a polar dielectric is inserted in between the capacitor plates, an electric field is generated due to the presence of net charges near the edge of the dielectric and the metal plates interface. Since the external electrical field merely aligns the dipoles, the dielectric as a whole is neutral. An...
4.6K
Electrostatic Boundary Conditions in Dielectrics
1.4K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.4K
Carrier Transport
554
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
554
Drag Force and Terminal Speed
2.4K
An interesting force in everyday life is the force of drag on an object when it is moving in a fluid. Like friction, the drag force always opposes the motion of an object. Unlike simple friction, the drag force is proportional to some function of the velocity of the object in that fluid. This functionality is complicated and depends upon the shape of the object, its size, its velocity, and the fluid it is in. For most large objects, such as cyclists, cars, and baseballs, that are not moving too...
2.4K
Inductance: Solid Cylindrical Conductor
367
To calculate the inductance of a solid cylindrical conductor, consider a 1-meter section of a non-magnetic, current-carrying conductor with radius r. Disregarding end effects and assuming uniform current density, Ampere's law helps determine the magnetic field inside the conductor. This law states that the magnetic field intensity H is concentric and constant within the conductor.
Given the uniform current distribution, the magnetic field Hx and flux density Bx inside the conductor are...
Given the uniform current distribution, the magnetic field Hx and flux density Bx inside the conductor are...
367

