Space-Confined One-Step Growth of 2D MoO₂ /MoS₂ Vertical Heterostructures for Superior Hydrogen Evolution in Alkaline...

2D material-based heterostructures are constructed by stacking or spicing individual 2D layers to create an interface between them, which have exotic properties. Here, a new strategy for the in situ growth of large numbers of 2D heterostructures on the centimeter-scale substrate is developed. In the method, large numbers of 2D MoS₂ , MoO₂ , or their heterostructures of MoO₂ /MoS₂ are controllably grown in the same setup by simply tuning the gap distance between metal precursor and growth substrate, which changes the concentration of metal precursors feed. A lateral force microscope is used first to identify the locations of each material in the heterostructures, which have MoO₂ on the top of MoS₂ . Noteworthy, the creation of a clean interface between atomic thin MoO₂ (metallic) and MoS₂ (semiconducting) results in a different electronic structure compared with pure MoO₂ and MoS₂ . Theoretical calculations show that the charge redistribution at such an interface results in an improved HER performance on the MoO₂ /MoS₂ heterostructures, showing an overpotential of 60 mV at 10 mA cm^-2 and a Tafel slope of 47 mV dec^-1 . This work reports a new strategy for the in situ growth of heterostructures on large-scale substrates and provides platforms to exploit their applications.