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Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

Jaemin Park1, Daihong Huh1, Soomin Son1

  • 1Department of Materials Science and Engineering Korea University Anam-ro 145, Seongbuk-gu Seoul 136-713 Republic of Korea.

Global Challenges (Hoboken, NJ)
|July 21, 2022
PubMed

Keywords:
Al 2O 3/IZO multilayerelectroformingresistive switchingtransparent memory

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