High ambipolar mobility in cubic boron arsenide.

Area of Science:

• Materials Science
• Solid State Physics
• Semiconductor Physics

Background:

• High thermal conductivity and electron-hole mobility are crucial for advanced electronic and photonic devices.
• Cubic boron arsenide (c-BAs) is a material with theoretical potential for superior electronic properties.

Purpose of the Study:

• To experimentally measure the thermal conductivity and ambipolar mobility of cubic boron arsenide (c-BAs).
• To investigate the relationship between impurity concentrations and the material's key properties.
• To assess c-BAs as a candidate for next-generation electronics.

Main Methods:

• Experimental measurement using the optical transient grating technique.
• Ab initio calculations to understand the underlying physics.
• Room temperature characterization of c-BAs samples.

Main Results:

• Experimentally determined thermal conductivity of 1200 W/m·K.
• Measured ambipolar mobility of 1600 cm²/V·s at room temperature.
• Ab initio calculations revealed that reduced ionized and neutral impurity concentrations are critical for high mobility and thermal conductivity, respectively.

Conclusions:

• Cubic boron arsenide (c-BAs) exhibits excellent thermal and electronic properties.
• Optimizing impurity levels is essential for realizing the full potential of c-BAs.
• The combination of ultrahigh thermal conductivity and high ambipolar mobility positions c-BAs as a promising material for future electronic applications.