Related Experiment Video
Updated: Sep 4, 2025
09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
4.1K
Complementary Resistive Switching Behavior in Tetraindolyl Derivative-Based Memory Devices
Surajit Sarkar1, Farhana Yasmin Rahman1, Hritinava Banik1
1Department of Physics, Thin Film and Nanoscience Laboratory, Suryamaninagar, West Tripura, 799022 Agartala, Tripura, India.
Langmuir : the ACS Journal of Surfaces and Colloids
|July 21, 2022
Summary
Complementary resistive switching (CRS) devices overcome sneak path issues in bipolar resistive switching (BRS) devices. Indole1 molecules demonstrate a temperature-induced transition from BRS to CRS, showing potential for ultradense memory applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Device Physics
Background:
- Bipolar resistive switching (BRS) devices suffer from sneak path issues in crossbar arrays.
- Complementary resistive switching (CRS) offers a solution to sneak path problems.
- Indole derivatives are explored for advanced memory applications.
Purpose of the Study:
- To investigate the resistive switching behavior of 1,4-bis(di(1H-indol-3-yl)methyl)benzene (Indole1) molecules.
- To explore the potential of Indole1 for complementary resistive switching (CRS) memory applications.
- To analyze the temperature-induced transition from BRS to CRS in Au/Indole1/ITO devices.
Main Methods:
- Fabrication of Au/Indole1/Indium tin oxide (ITO) devices.
- Characterization of resistive switching properties under varying temperatures (≥353 K).
- Evaluation of memory characteristics including memory window, data retention, stability, and device yield.
Main Results:
- Au/Indole1/ITO devices exhibited bipolar resistive switching (BRS) at ambient conditions.
- A dynamic evolution from BRS to CRS was observed at temperatures of 353 K and higher.
- The CRS mode showed a significant memory window (∼10^3), good data retention (5.1 × 10^3 s), and stability over 50 days with a device yield of ∼60%.
Conclusions:
- Indole1 molecules can facilitate a temperature-triggered transition to complementary resistive switching (CRS).
- The observed CRS behavior with excellent performance metrics suggests potential for ultradense resistive random access memory (RRAM).
- Indole derivatives represent a promising class of materials for future high-density memory technologies.
Related Concept Videos
01:25MOS Capacitor
942
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
942
01:22Switching of BJT
491
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
491
01:22Biasing of FET
362
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
362
01:22MOSFET: Enhancement Mode
462
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
462
00:51Non-ohmic Devices
1.2K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.2K
01:16Equivalent Resistance
571
In circuit analysis, situations often arise where resistors are neither in series nor parallel configurations. To tackle such scenarios, three-terminal equivalent networks like the wye (Y) (Figure 1 (a)) or tee (T) and delta (Δ) (Figure 1 (b)) or pi (π) networks come into play. These networks offer versatile solutions and are frequently encountered in various applications, including three-phase electrical systems, electrical filters, and matching networks.
571