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A highly tunable photoelectric response of graphene field-effect transistor with lateral P-N junction in channel

Yantao Zhang1, Zhong Wang1, Guohe Zhang1

  • 1School of Microelectronics, Faculty of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.

Nanotechnology
|July 21, 2022
PubMed

Keywords:
GFETP–N junctionback-gate voltagephotoelectric responsepolarity of photocurrent

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