Molecular Design of Silicon-Containing Diazenes: Absorbance of E and Z Isomers in the Near-Infrared Region
Evgeniya P Doronina1, Viatcheslav Jouikov2, Valery F Sidorkin1
1A. E. Favorsky Irkutsk Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, 1 Favorsky st., 664033, Irkutsk, Russian Federation.
Abstract:
The effective use of photochromic systems based on azo compounds in a number of applications, especially biomedical and pharmacological ones, is impeded by the unresolved problem of their E⇆Z isomerization in the near-IR region, NIR (780-1400 nm). We have demonstrated at the TD-DFT, STEOM-DLPNO-CCSD and CASSCF-NEVPT2 levels of theory that the presence of a silylated diazene core -Si-N=N-Si- with three-, tetra- or five-coordinated silicon atoms practically guarantees the absorption of the E and Z forms of such derivatives in NIR and the amazing (185-400 nm) separation of their first absorption bands. In particular, the maximum λ1 of the first n→π* band of the E isomer of azosilabenzene ASiB is at ∼1030 nm, while for the Z isomer λ1 ≅1340 nm. Based on the found bistable azo compounds (ASiB, bis(silyl)- SiD and bis(silatranyl)- SaD diazenes) and their derivatives with E and Z absorption in NIR, unique photoswitches can be created for a number of applications, in particular, for photothermal therapy.
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