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Fermi Level Dynamics

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Gate-Defined Electron Interferometer in Bilayer Graphene.

Shuichi Iwakiri¹, Folkert K de Vries¹, Elías Portolés¹

¹Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.

|July 26, 2022

Summary

This summary is machine-generated.

We developed a novel electron interferometer using electrostatic gating in bilayer graphene, enabling tunable Aharonov-Bohm oscillations and long coherence lengths for quantum device applications.

Keywords:

Aharonov-Bohm effect Bilayer graphene band gap etching gate-defined device interferometer

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Area of Science:

Condensed matter physics
Quantum electronics
Materials science

Background:

Conventional methods for preparing quantum devices can cause sample degradation.
Electron interferometers are crucial for studying quantum phenomena.

Purpose of the Study:

To present a novel electron interferometer fabricated using electrostatic gating in bilayer graphene.
To demonstrate the device's high quality and tunability for quantum transport studies.

Main Methods:

Fabrication of an electron interferometer using electrostatic gating in encapsulated bilayer graphene.
Observation and analysis of Aharonov-Bohm oscillations.
Temperature and magnetic field dependent measurements to determine coherence length and carrier behavior.

Main Results:

Successful fabrication of a gate-defined electron interferometer in bilayer graphene.
Observation of Aharonov-Bohm oscillations with periods h/e, h/2e, h/3e, and h/4e.
Demonstrated coherence length exceeding the ring perimeter, tunable carrier type (electrons/holes), and semiclassical carrier trajectories.

Conclusions:

The gate-defined interferometer minimizes sample degradation and offers high tunability.
The device serves as a promising platform for exploring exotic quantum states, including superconductivity in twisted bilayer graphene.