Optical characterization of deuterated silicon-rich nitride waveguides

Chemical vapor deposition-based growth techniques allow flexible design of complementary metal-oxide semiconductor (CMOS) compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized, and we experimentally confirm that the silicon-rich nitride films grown with SiD₄ eliminates Si-H and N-H related absorption. The performance of identical waveguides for films grown with SiH₄ and SiD₄ are compared demonstrating a 2 dB/cm improvement in line with that observed in literature. Waveguides fabricated on the SRN:D film are further shown to possess a nonlinear parameter of 95 W^-1 m^-1, with the film exhibiting a linear and nonlinear refractive index of 2.46 and 9.8 [Formula: see text] 10^-18 m²W^-1 respectively.