Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Hybridization of Atomic Orbitals II03:35

Hybridization of Atomic Orbitals II

33.5K
sp3d and sp3d 2 Hybridization
33.5K
Types of Semiconductors01:20

Types of Semiconductors

905
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
905
Ionization Energy03:12

Ionization Energy

34.3K
The amount of energy required to remove the most loosely bound electron from a gaseous atom in its ground state is called its first ionization energy (IE1). The first ionization energy for an element, X, is the energy required to form a cation with 1+ charge:
34.3K
Predicting Molecular Geometry02:27

Predicting Molecular Geometry

35.7K
VSEPR Theory for Determination of Electron Pair Geometries
35.7K
P-N junction01:11

P-N junction

670
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
670
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

499
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
499

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Modeling of Unoriented Dendritic Grain Structures in Hard-Soft Magnetic Composites.

Materials (Basel, Switzerland)·2026
Same author

Flux Enhancement in Hybrid Pervaporation Membranes Filled with Mixed Magnetic Chromites ZnCr<sub>2</sub>Se<sub>4</sub>, CdCr<sub>2</sub>Se<sub>4</sub> and CuCr<sub>2</sub>Se<sub>4</sub>.

Molecules (Basel, Switzerland)·2025
Same author

Influence of Selected Transition Metals on Hard Magnetic Properties of Dy-Fe-Nb-B Vacuum Suction Rods.

Materials (Basel, Switzerland)·2025
Same author

Incipient Plasticity of Si and GaAs: Review and Perspectives.

Materials (Basel, Switzerland)·2025
Same author

The Influence of Terfenol-D Content on the Structure and Properties of Multiferroic Composites Obtained Based on PZT-Type Material and Terfenol-D.

Materials (Basel, Switzerland)·2025
Same author

Atom's Dynamics and Crystal Structure: An Ordinal Pattern Method.

The journal of physical chemistry. A·2025

Related Experiment Video

Updated: Sep 3, 2025

Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots
08:21

Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots

Published on: May 7, 2019

9.9K

Interatomic Potential for InP.

Dariusz Chrobak1, Anna Majtyka-Piłat1, Grzegorz Ziółkowski2

  • 1Institute of Materials Engenering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1A, 41-500 Chorzow, Poland.

Materials (Basel, Switzerland)
|July 27, 2022
PubMed
Summary

A new analytical bond-order potential for indium phosphide (InP) accurately models its elastic properties and pressure-induced phase transitions. This potential also describes defect formation in the InP crystal structure.

Keywords:
indium phosphideinteratomic potentialmolecular dynamics simulationsnative point defectsphase transformation

More Related Videos

Experimental Methods for Efficient Solar Hydrogen Production in Microgravity Environment
11:38

Experimental Methods for Efficient Solar Hydrogen Production in Microgravity Environment

Published on: December 3, 2019

7.8K
Synthesis of Cd-free InP/ZnS Quantum Dots Suitable for Biomedical Applications
10:56

Synthesis of Cd-free InP/ZnS Quantum Dots Suitable for Biomedical Applications

Published on: February 6, 2016

14.1K

Related Experiment Videos

Last Updated: Sep 3, 2025

Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots
08:21

Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots

Published on: May 7, 2019

9.9K
Experimental Methods for Efficient Solar Hydrogen Production in Microgravity Environment
11:38

Experimental Methods for Efficient Solar Hydrogen Production in Microgravity Environment

Published on: December 3, 2019

7.8K
Synthesis of Cd-free InP/ZnS Quantum Dots Suitable for Biomedical Applications
10:56

Synthesis of Cd-free InP/ZnS Quantum Dots Suitable for Biomedical Applications

Published on: February 6, 2016

14.1K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Computational Materials Science

Background:

  • Accurate modeling of indium phosphide (InP) requires interatomic potentials capturing elastic properties and phase transitions.
  • Classical potentials must describe the reversible B3↔B1 phase transition under pressure.

Purpose of the Study:

  • Develop a new parametrization of the analytical bond-order potential for InP.
  • Ensure the potential accurately reproduces fundamental physical properties and phase transition behaviors.

Main Methods:

  • Developed a new analytical bond-order potential parametrization for InP.
  • Validated the potential against first-principles calculations for B3 and B1 phases.

Main Results:

  • The new potential accurately reproduces InP's lattice parameters, cohesive energy, and stiffness coefficients for both B3 and B1 phases.
  • The model successfully describes the reversible B3↔B1 pressure-induced phase transition.
  • The potential also models the formation of native point defects in the B3 phase of InP.

Conclusions:

  • The developed analytical bond-order potential offers a reliable tool for simulating InP structural phenomena.
  • This potential advances the understanding of InP's mechanical behavior and defect dynamics.