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Polarization Control in Integrated Silicon Waveguides Using Semiconductor Nanowires
Ali Emre Kaplan1,2, Valerio Vitali3, Valeria Demontis4
1Photonics Research Group, Department of Electrical, Computer and Biomedical Engineering, University of Pavia, 27100 Pavia, Italy.
Nanomaterials (Basel, Switzerland)
|July 27, 2022
Summary
This study introduces a compact silicon photonic device using InP nanowires for efficient polarization conversion. It achieves full conversion with minimal loss, enabling advanced photonic processors.
Area of Science:
- Photonics
- Nanotechnology
- Materials Science
Background:
- Silicon photonics offers a scalable platform for optical integrated circuits.
- Polarization control is crucial for advanced optical signal processing.
- Integrating III-V semiconductors with silicon photonics enables novel functionalities.
Purpose of the Study:
- To design and numerically analyze a silicon photonic polarization converter.
- To demonstrate full polarization conversion between quasi-TE and quasi-TM modes.
- To achieve this in a compact device with low optical loss.
Main Methods:
- Design of a silicon photonic device integrating Indium Phosphide (InP) nanowires.
- Comprehensive numerical simulations to analyze device performance.
- Analysis of polarization conversion efficiency and optical power loss.
Main Results:
- Achieved full polarization conversion (quasi-TE to quasi-TM and vice versa).
- Demonstrated conversion in devices with small footprints (<20 µm).
- Reported minimal power loss (<2 dB) for the conversion process.
Conclusions:
- The proposed device enables efficient polarization control on a silicon photonic platform.
- This integration approach is promising for developing complex, reconfigurable photonic processors.
- The technology facilitates advanced manipulation of light polarization in integrated optics.
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