Effect of the Indentation Load on the Raman Spectra of the InP Crystal

Dariusz Chrobak1, Mateusz Dulski1, Grzegorz Ziółkowski2

  • 1Institute of Materials Engenering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1A, 41-500 Chorzow, Poland.

Summary

This study explores how indentation load affects the Raman spectra of InP crystals. Researchers indented the (001) surface of undoped and S-doped InP with loads from 15 mN to 100 mN. They found that increasing indentation load shifts Raman bands to lower frequencies, indicating reduced elastic energy in the plastic zone. The phase transition B3→B1 was not observed, suggesting plastic deformation is governed by dislocation activity. The study also found that the hardness of InP decreases with higher indentation loads. These findings provide insights into the mechanical behavior of InP under indentation.

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