Related Experiment Video
Updated: Sep 3, 2025
06:44
Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
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An Oxygen Vacancy Memristor Ruled by Electron Correlations
Vincent Humbert1, Ralph El Hage1, Guillaume Krieger2
1Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|July 28, 2022
Summary
This study shows how oxygen exchange in NdNiO3 tunnel junctions creates memristive switching effects. This interplay between electronic properties and oxygen vacancies opens new paths for neuromorphic computing applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Resistive switching effects are crucial for advanced memory and neuromorphic computing.
- NdNiO3 exhibits a metal-to-insulator transition (MIT) due to its strongly correlated electron system.
Purpose of the Study:
- To demonstrate memristive switching effects in NdNiO3 tunnel junctions.
- To investigate the interplay between the MIT and redox-driven oxygen exchange.
Main Methods:
- Fabrication of tunnel junctions using NdNiO3.
- Characterization of resistive switching behavior.
- Analysis of the influence of oxygen exchange and MIT on device performance.
Main Results:
- Memristive switching effects were successfully demonstrated.
- A strong interplay between the MIT and redox mechanism was observed.
- Unique temperature-dependent behavior and extended resistance state lifetimes were achieved.
Conclusions:
- The findings highlight the role of electronic correlations and oxygen vacancies in nickelates.
- This research opens new avenues for neuromorphic computing by controlling correlated states via electric fields.
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