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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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New ternary inverter with memory function using silicon feedback field-effect transistors.

Jaemin Son1, Kyoungah Cho1, Sangsig Kim2

  • 1Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea.

Scientific Reports
|July 28, 2022
PubMed
Summary
This summary is machine-generated.

This study introduces a novel ternary inverter using silicon feedback field-effect transistors (FBFETs) for advanced computing. These FBFETs enable a memory function within a complementary metal-oxide-semiconductor (CMOS) logic scheme, paving the way for multivalued logic applications.

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Area of Science:

  • Semiconductor device physics
  • Solid-state electronics
  • Materials science

Background:

  • Conventional complementary metal-oxide-semiconductor (CMOS) technology faces limitations in achieving higher logic densities and energy efficiency.
  • Ternary logic, which utilizes three states (0, 1, and 2) instead of two, offers potential for increased information processing capabilities.
  • Integrating memory functions directly into logic circuits can lead to more compact and efficient computing architectures.

Purpose of the Study:

  • To develop and characterize a fully complementary metal-oxide-semiconductor (CMOS)-compatible ternary inverter with an integrated memory function.
  • To investigate the performance of silicon feedback field-effect transistors (FBFETs) in enabling ternary logic operations and state retention.
  • To demonstrate the feasibility of FBFET-based ternary inverters for future multivalued logic applications.

Main Methods:

  • Fabrication of silicon feedback field-effect transistors (FBFETs) compatible with standard CMOS processes.
  • Design and implementation of a ternary inverter circuit using series-connected p- and n-channel FBFETs.
  • Experimental characterization of the ternary inverter's voltage gain, logic holding time, endurance, and memory characteristics, focusing on low subthreshold swings due to carrier accumulation and positive feedback.

Main Results:

  • Achieved a fully CMOS-compatible ternary inverter with a robust memory function.
  • Demonstrated excellent memory characteristics with extremely low subthreshold swings, attributed to the positive feedback mechanism in FBFETs.
  • The ternary inverter exhibited a high voltage gain of approximately 73 V/V, a logic holding time of 150 seconds, and reliable endurance of approximately 10^5 cycles.

Conclusions:

  • The developed FBFET-based ternary inverter successfully integrates switching and memory functions within a conventional CMOS logic scheme.
  • The device's performance metrics, including high gain, long holding time, and endurance, highlight its potential for practical implementation.
  • This work presents a promising new computing paradigm for multivalued logic applications, leveraging the unique properties of feedback field-effect transistors.