Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Asymmetric Ultrathin Salt-Rich Composite Polymer Electrolyte Formed by Spin Coating for High-Performance Lithium Metal Batteries.

ACS applied materials & interfaces·2026
Same author

In Situ TEM Investigation of Cu/ZnO Interface Formation Mechanisms Derived from the Decomposition of Copper-Zinc Hydroxycarbonate Precursors.

ACS applied materials & interfaces·2026
Same author

Industrial-Scale Synthesis of Green Ammonia over Lanthanum Coated Iron-Based Catalysts under Mild Conditions.

ACS applied materials & interfaces·2026
Same author

A vapor-deposited nanotwinned copper thin film enhances C<sub>2</sub> production in CO<sub>2</sub> electroreduction.

Chemical communications (Cambridge, England)·2026
Same author

Copper-hydroxyl interactions drive water-promoted copper surface oxidation and mobility.

Nature communications·2026
Same author

Structures of aggregated metal-centered organic molecules revealed by transmission electron microscopy.

Dalton transactions (Cambridge, England : 2003)·2025

Related Experiment Video

Updated: Jun 15, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.9K

In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide.

Zejian Dong1, Na Zhang1, Shuangbao Wang2

  • 1Institute of Molecular Plus, Department of Chemistry, Tianjin University, Tianjin 300072, P. R. China.

The Journal of Physical Chemistry Letters
|July 29, 2022
PubMed
Summary
This summary is machine-generated.

This study directly visualizes atomic defect formation and annihilation in monoclinic WO3 using in situ atomic imaging. Understanding these defect dynamics offers insights for manipulating functional materials.

More Related Videos

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

11.9K
Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

6.4K

Related Experiment Videos

Last Updated: Jun 15, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.9K
Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

11.9K
Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

6.4K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Atomic defects critically influence functional materials like catalysts and semiconductors.
  • Directly observing defect formation and annihilation under operational conditions is essential but challenging.
  • Understanding defect dynamics is key to controlling material properties.

Purpose of the Study:

  • To directly visualize the atomic-scale formation and annihilation mechanisms of planar defects in monoclinic WO3 in real time.
  • To elucidate the underlying atomistic processes driving defect dynamics.
  • To provide insights into the manipulation of defects in functional materials.

Main Methods:

  • Utilized in situ atomic imaging with an aberration-corrected environmental transmission electron microscope (AC-ETEM).
  • Performed real-time, atomic-scale observation of defect evolution.
  • Employed density functional theory (DFT)-based calculations for theoretical validation.

Main Results:

  • Directly visualized the nucleation and propagation of dislocation cores, leading to planar defect formation in WO3.
  • Captured the real-time atomistic process of defect dynamics.
  • Rationalized dislocation formation via oxygen extraction and atomic channeling.

Conclusions:

  • Provided unprecedented atomic-scale insights into the real-time dynamics of planar defects in oxides.
  • Demonstrated the power of in situ AC-ETEM for studying defect mechanisms.
  • Offered a pathway for understanding and controlling defects in functional materials.