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Published on: January 21, 2016
Chern Number Tunable Quantum Anomalous Hall Effect in Monolayer Transitional Metal Oxides via Manipulating
Zeyu Li1, Yulei Han2, Zhenhua Qiao1,3
1CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
Abstract:
Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that NiAsO_{3} and PdSbO_{3}, monolayer transitional metal oxides, can realize QAHE with tunable Chern numbers via manipulating their magnetization orientations. When the magnetization lies in the x-y plane and all mirror symmetries are broken, the low-Chern-number (i.e., C=±1) phase emerges. When the magnetization exhibits nonzero z-direction component, the system enters the high-Chern-number (i.e., C=±3) phase, even in the presence of canted magnetization. The global band gap can approach the room-temperature energy scale in monolayer PdSbO_{3} (23.4 meV), when the magnetization is aligned to z direction. By using Wannier-based tight-binding model, we establish the phase diagram of magnetization induced topological phase transition. Our work provides a high-temperature QAHE system with tunable Chern number for the practical electronic application.
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