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Thermomechanical stress causes failure in multilayered thin films. Analytical calculations accurately predict failure points, identifying films with high tensile residual stress as most vulnerable.

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Area of Science:

  • Materials Science
  • Mechanical Engineering
  • Semiconductor Manufacturing

Background:

  • Multilayered thin films are crucial in semiconductor devices.
  • Thermomechanical failure, including cracking and delamination, is a significant reliability concern during manufacturing and operation.
  • High aspect ratio structures exacerbate these failure modes.

Purpose of the Study:

  • To investigate the impact of thermomechanical stress on multilayered thin film failure on silicon substrates.
  • To develop analytical and experimental methods for predicting failure.
  • To identify critical factors contributing to thin film reliability.

Main Methods:

  • Analytical calculations based on plate bending theory to determine residual stress.
  • Thermomechanical testing to apply stress and induce failure.
  • Comparison of predicted failure regions with experimental observations.

Main Results:

  • Analytical calculations successfully predicted the weakest regions for failure in thin films.
  • Experimental tests confirmed that films with maximum tensile residual stress are most susceptible to cracking and interfacial delamination.
  • A strong agreement was found between predicted and experimentally observed failure patterns.

Conclusions:

  • Residual stress significantly influences the thermomechanical failure of multilayered thin films.
  • The developed analytical and experimental tools can predict failure in thin films.
  • These findings are valuable for improving the reliability and design of semiconductor devices.