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Updated: Sep 2, 2025

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Published on: July 2, 2018
Enhancing the Spin-Orbit Torque Efficiency by the Insertion of a Sub-nanometer β-W Layer
Yaojin Li1, Xi Zha1, Yifan Zhao1
1Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China.
Abstract:
Spin-orbit torque (SOT) efficiency is one of the key issues of spintronics. However, enhancing the SOT efficiency is usually limited by the positive correlation between resistivity and the spin Hall ratio, where a high resistivity often accompanies a large spin Hall ratio. Here, we demonstrate that sub-nanometer β-W intercalation has a considerable impact on the SOT efficiency in α-W (6 nm)/Co (8 nm)/Pt (3 nm) samples. The damping-like SOT efficiency per unit current density, ξDL, of α-W (5.7 nm)/β-W (0.3 nm)/Co (8 nm)/Pt (3 nm) shows a ∼ 296% enhancement compared to that of the α-W/Co/Pt system. Meanwhile, a resistivity similar to that of α-W and the spin Hall ratio larger than β-W induce a giant damping-like SOT efficiency per applied electric field, ξDL, which is about 12.1 times larger than that of β-W. Our findings will benefit the SOT devices by reducing energy consumption.
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