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Author Correction: Traps and transport resistance are the next frontiers for stable non-fullerene acceptor solar

Christopher Wöpke1, Clemens Göhler1, Maria Saladina1

  • 1Institut für Physik, Technische Universität Chemnitz, 09126, Chemnitz, Germany.

Nature Communications
|August 2, 2022
PubMed
Abstract

No abstract available in PubMed .

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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