Unveiling the effect of 2D silagraphene structural diversity on electronic properties: DFT, DOS, and ELF studies

Recently, fully π-functional two-dimensional (2D) materials have been reported for electronic device applications. Graphene is one of these 2D materials that is attributed to 2D electron confinement effects and exhibits an aromatic character; however, it is characterized by vanishing the bandgap energy. Hence, research was focused on the discovery of graphene-based 2D materials to reduce the bandgap energy. Herein, we investigate the silagraphene structures (Si_xC_y) using DFT calculations to undertake and improve structural, physico-chemical, and electronic properties. Various types of 2D networks have been investigated by considering C-C and C-Si bonds in relative positions. Both conjugation and hyperconjugation phenomenon have been deeply examined and it seemed that they take advantage of each other depending on the C-C and C-Si bond positions. Localized orbital locator (LOL) and electron localization function (ELF) were also performed to examine the electronic densities in the investigated 2D networks and unveil the electronic properties of the studied materials.