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γ-ray Radiation Hardness of CsPbBr3 Single Crystals and Single-Carrier Devices
Lei Gao1, Jia-Lin Sun2, Qiang Li1
1Department of Chemistry, Tsinghua University, Beijing 100084, China.
Abstract:
The superior environmental stability of all-inorganic metal halide perovskites compared to their organic-inorganic counterparts makes them more promising in practical applications. Here, the stability of an archetypical all-inorganic CsPbBr3 single crystal and its single-carrier devices under 60Co γ-ray irradiation was investigated. The CsPbBr3 single crystal itself shows ostensible hardness as its structural and optical properties present imperceptible changes even with a total ionizing dose of 800 krad. Unexpectedly, the single crystal-based single-carrier devices exhibit apparent dose-dependent hardness. The performance of the hole-only device suffers from more deterioration than the electron-only device under high irradiation doses (>400 krad). Our results reveal that such a discrepancy originates from the different influences of γ-ray irradiation-induced defects on the transport behaviors of holes and electrons in CsPbBr3 single-crystal devices. These findings offer a new understanding of the interaction mechanism between γ-photons and all-inorganic metal halide perovskite-based devices.
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