Synthesis of vacant graphitic carbon nitride in argon atmosphere and its utilization for photocatalytic hydrogen...

Graphitic carbon nitride (C₃N₄) was synthesised from melamine at 550 °C for 4 h in the argon atmosphere and then was reheated for 1-3 h at 500 °C in argon. Two band gaps of 2.04 eV and 2.47 eV were observed in all the synthetized materials. Based on the results of elemental and photoluminescence analyses, the lower band gap was found to be caused by the formation of vacancies. Specific surface areas of the synthetized materials were 15-18 m²g^-1 indicating that no thermal exfoliation occurred. The photocatalytic activity of these materials was tested for hydrogen generation. The best photocatalyst showed 3 times higher performance (1547 μmol/g) than bulk C₃N₄ synthetized in the air (547 μmol/g). This higher activity was explained by the presence of carbon (V_C) and nitrogen (V_N) vacancies grouped in their big complexes 2V_C + 2V_N (observed by positron annihilation spectroscopy). The effect of an inert gas on the synthesis of C₃N₄ was demonstrated using Graham´s law of ammonia diffusion. This study showed that the synthesis of C₃N₄ from nitrogen-rich precursors in the argon atmosphere led to the formation of vacancy complexes beneficial for hydrogen generation, which was not referred so far.