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Dark Current Modeling for a Polyimide-Amorphous Lead Oxide-Based Direct Conversion X-ray Detector.

Tristen Thibault1, Oleksandr Grynko1, Emma Pineau1

  • 1Department of Physics, Lakehead University, Thunder Bay, ON P7B 5E1, Canada.

Sensors (Basel, Switzerland)
|August 12, 2022
PubMed
Summary
This summary is machine-generated.

Dark current (DC) in amorphous lead oxide (a-PbO) X-ray detectors is reduced by polyimide (PI) blocking layers. A new model explains DC reduction via electric field redistribution, optimizing PI thickness for better detector performance.

Keywords:
X-ray detectoramorphous lead oxideblocking layerdark currentdirect conversionkineticsmathematical modelpolyimide

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Area of Science:

  • Materials Science
  • Medical Imaging Physics
  • Semiconductor Device Physics

Background:

  • Amorphous selenium (a-Se) X-ray photoconductors enabled direct conversion flat panel X-ray imagers (FPXIs).
  • Understanding dark current (DC) origins is crucial for advancing new X-ray detector materials.
  • Amorphous lead oxide (a-PbO) and polyimide (PI) form a promising alternative X-ray photoconductive structure.

Purpose of the Study:

  • Investigate the origin and transient behavior of dark current (DC) in polyimide/amorphous lead oxide (PI/a-PbO) detectors.
  • Develop a theoretical model for electric field-dependent DC kinetics in PI/a-PbO structures.
  • Determine optimal PI layer thickness to minimize DC and enhance detector performance.

Main Methods:

  • Measured transient DC in PI/a-PbO detectors under varying electric fields (5-20 V/μm).
  • Developed a theoretical model incorporating electric field redistribution and charge carrier dynamics.
  • Validated the model by comparing experimental results with simulations accounting for field-induced charge release and hopping transitions.

Main Results:

  • Initial DC is dominated by hole injection, decaying over time due to trapped holes in PI.
  • Steady-state DC is governed by thermal generation and multiple-trapping (MT) transport in a-PbO, except at 20 V/μm.
  • Electric field redistribution in a-PbO enhances charge collection efficiency and temporal performance.

Conclusions:

  • A thicker PI layer is recommended to further suppress DC in PI/a-PbO detectors.
  • The developed model predicts optimal PI thickness, reducing experimental trial and error.
  • Electric field redistribution acts as a beneficial 'warm-up' period, improving detector operational characteristics.