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Type-I Heterostructure Based on WS2/PtS2 for High-Performance Photodetectors
Zihan Wang1, Hui Zhang1, Weike Wang2
1Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
ACS Applied Materials & Interfaces
|August 12, 2022
Summary
This study introduces a highly efficient van der Waals (vdW) WS2/PtS2 photodiode. The device demonstrates exceptional performance, including a high rectification ratio and detectivity, due to its unique tunneling mechanism.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Device Physics
Background:
- Two-dimensional (2D) layered materials enable van der Waals (vdW) heterodiodes for advanced optoelectronic applications.
- Type-I heterostructures show promise for photodetectors, but their tunneling mechanisms require further investigation.
Purpose of the Study:
- To construct and characterize a highly efficient Type-I vdW heterostructure photodiode using WS2/PtS2.
- To elucidate the tunneling phenomena and their impact on device performance.
Main Methods:
- Fabrication of an nn+ WS2/PtS2 Type-I vdW heterostructure photodiode.
- Electrical and photoresponse measurements to evaluate device performance metrics.
Main Results:
- Achieved an ultrahigh reverse rectification ratio exceeding 10^5 due to suppressed reverse current.
- Demonstrated a unilateral depletion region in WS2, enhancing external quantum efficiency (EQE) to 67% by minimizing carrier recombination.
- Exhibited a light on/off ratio over 10^5 and high detectivity of 4.53 × 10^10 Jones, attributed to the tunneling mechanism enabling large photocurrent and low dark current.
Conclusions:
- The WS2/PtS2 Type-I vdW heterostructure photodiode offers a promising platform for high-performance photodetection.
- The revealed tunneling mechanism provides insights for designing novel, efficient photodiode devices.

