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Interlayer Exciton Diode and Transistor.

Daniel N Shanks1, Fateme Mahdikhanysarvejahany1, Trevor G Stanfill1

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Nano Letters
|August 15, 2022
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Summary
This summary is machine-generated.

Researchers achieved unidirectional transport of interlayer excitons (IXs) in MoSe2-WSe2 heterostructures. This breakthrough enables high-speed exciton flow for potential low-loss excitonic circuits.

Keywords:
Excitonic CircuitsInterlayer ExcitonsNanopatterningTransition Metal Dichalcogenidesvan der Waals Heterostructures

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Optics

Background:

  • Interlayer excitons (IXs) are crucial for developing low-loss excitonic circuits.
  • Efficient control over IX transport is essential for realizing these circuits.

Purpose of the Study:

  • To demonstrate unidirectional transport of IXs in nanoscale channels.
  • To investigate the potential for creating optically gated excitonic transistors.

Main Methods:

  • Fabrication of MoSe2-WSe2 heterostructures with lithographically defined graphene gates.
  • Creation of a potential energy "slide" using a triangular etch.
  • Spatially and temporally resolved photoluminescence measurements.

Main Results:

  • Observed unidirectional transport of IXs along defined channels.
  • Measured IX drift velocity up to 2 × 10^6 cm/s.
  • Demonstrated optical gating of exciton flow, creating an excitonic transistor.

Conclusions:

  • Unidirectional IX transport achieved, paving the way for low-loss excitonic circuits.
  • High-speed exciton flow demonstrated, exceeding previous experimental results.
  • Potential for studying bosonic transport and creating custom exciton energy landscapes.