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Updated: Sep 1, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Mooij Law Violation from Nanoscale Disorder
Aifeng Wang1, Lijun Wu1, Qianheng Du1,2
1Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States.
Abstract:
Nanoscale inhomogeneity can profoundly impact properties of two-dimensional van der Waals materials. Here, we reveal how sulfur substitution on the selenium atomic sites in Fe1-Se1-S (0 ≤ x ≤ 1, y ≤ 0.1) causes Fe-Ch (Ch = Se, S) bond length differences and strong disorder for 0.4 ≤ x ≤ 0.8. There, the superconducting transition temperature Tc is suppressed and disorder-related scattering is enhanced. The high-temperature metallic resistivity in the presence of strong disorder exceeds the Mott limit and provides an example of the violation of Matthiessen's rule and the Mooij law, a dominant effect when adding moderate disorder past the Drude/Matthiessen's regime in all materials. The scattering mechanism responsible for the resistivity above the Mott limit is unrelated to phonons and arises for strong Se/S atom disorder in the tetrahedral surrounding of Fe. Our findings shed light on the intricate connection between the nanostructural details and the unconventional scattering mechanism, which is possibly related to charge-nematic or magnetic spin fluctuations.
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