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Giant g-factor in Self-Intercalated 2D TaS₂.

Ziying Wang^1,2,3, Zishen Wang^3,4, Xin Zhou²

¹SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.

Small (Weinheim an Der Bergstrasse, Germany)

|August 21, 2022

Summary

Researchers enhanced the Landé g-factor in spintronic materials using self-intercalation. This method, demonstrated in Ta7S12, induces ferromagnetism and boosts the g-factor to ~77, enabling better spin manipulation.

Keywords:

TaS 2 g-factor scanning tunneling microscopy self-intercalation strong correlation

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Area of Science:

Materials Science
Condensed Matter Physics
Spintronics

Background:

The Landé g-factor is crucial for manipulating spins in spintronic devices using electric and magnetic fields.
Enhancing the g-factor is key to advancing spintronic applications.

Purpose of the Study:

To investigate self-intercalation as a strategy to enhance the Landé g-factor in transition metal dichalcogenides.
To explore the electronic structure and magnetic properties of self-intercalated 2H-TaS2.

Main Methods:

Scanning tunneling microscopy (STM) for structural characterization.
Scanning tunneling spectroscopy (STS) for electronic structure and g-factor determination.
Analysis of density of states (DOS) and magnetic field sensitivity.

Main Results:

A self-intercalated phase, Ta7S12, was synthesized and characterized.
A sharp density of states peak at the Fermi level indicates Stoner criteria fulfillment for ferromagnetism.
An effective g-factor of approximately 77 was measured, showing sensitivity to magnetic fields.

Conclusions:

Self-intercalation of transition metal dichalcogenides with native metal atoms is a viable strategy to enhance the Landé g-factor.
Interlayer charge transfer in Ta7S12 induces ferromagnetic instability and spin-split states.
This approach offers a new pathway for tuning g-factors in materials for spintronics.