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Patterned Photostimulation with Digital Micromirror Devices to Investigate Dendritic Integration Across Branch Points

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A photon-controlled diode with a new signal-processing behavior.

Shun Feng¹, Ruyue Han¹, Lili Zhang¹

¹Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.

National Science Review

|August 22, 2022

Summary

This summary is machine-generated.

Researchers developed a novel photon-controlled diode using molybdenum disulfide. This device transitions from fully-off to rectified output, functioning as a photomemory with high responsivity and long retention times.

Keywords:

fully-off photomemory array photon-controlled diode rectifying

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Area of Science:

Materials Science
Optoelectronics
Semiconductor Devices

Background:

Photodetectors are crucial for optoelectronic integrated circuits, typically switching from rectified to fully-on or fully-off to fully-on states upon illumination.
A device exhibiting a fully-off to rectified current transition under illumination is theoretically possible but not yet demonstrated.

Purpose of the Study:

To report the first photon-controlled diode based on a molybdenum disulfide (MoS2) junction.
To investigate the device's transition from a photodetector to a multifunctional photomemory.
To explore the performance of a 3x3 photomemory array for optical signal processing.

Main Methods:

Fabrication of a n/n- molybdenum disulfide junction to create Schottky junctions at the cathode and anode.
Modulation of device behavior by adjusting the thickness of the photogating layer.
Characterization of the device as a photodetector and photomemory, including responsivity and retention time measurements.
Testing of a 3x3 photomemory array for crosstalk and optical signal-processing capabilities.

Main Results:

Demonstrated a novel photon-controlled diode with a fully-off to rectified output current transition.
Achieved multifunctional photomemory behavior by increasing photogating layer thickness.
Obtained the highest reported non-volatile responsivity (4.8 x 10^7 A/W) and longest retention time (6.5 x 10^6 s) for a photomemory device.
A 3x3 array exhibited no crosstalk and demonstrated wavelength and power-density selectivity.

Conclusions:

The developed molybdenum disulfide photodetector functions as a unique photon-controlled diode and multifunctional photomemory.
The device exhibits superior performance metrics, including record responsivity and retention time.
The photomemory array shows potential for integrated optical signal processing applications without selector elements.