Mechanism of Topology Change of Flat Magnetic Structures

The paper investigates the processes of the magnetization reversal of perforated ferromagnetic films with strong anisotropy of the easy-plane type. The investigations have shown that, influenced by a current impulse passing through an antidot, an inhomogeneous magnetic structure is formed, which is accompanied by the localization of a quasiparticle with the +1 topological charge on the antidot and by an emission of a quasiparticle with a -1 charge. It is established that this scenario of the film magnetization reversal underlies a reformation of its inhomogeneous structure also if two or four antidots are present in the film, irrespective of the fact of through which antidots and in which directions the currents are passed. The results of the research obtained by using two independent methods (solving the Landau-Lifshitz-Gilbert equations and analyzing the lattice model) demonstrated good agreement between the two. It is shown that a magnetic film comprising two or four antidots can be used as a memory cell for recording data in the ternary system.