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Updated: Aug 30, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Ultralow-Power and Radiation-Tolerant Complementary Metal-Oxide-Semiconductor Electronics Utilizing Enhancement-Mode
Xin Wang1,2,3,4, Maguang Zhu2, Xiaoqian Li1
1Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P.R. China.
Abstract:
The development of eco-friendly, ultralow-power and easy-to-process electronics is facing dominant challenges in emerging off-the-grid applications, such as the Internet of Things (IoTs) and extreme environment explorations at the south/north pole, in the deep sea, and in outer space. Eco-friendly, biodegradable, lightweight, and flexible paper-based electronics can provide many new possibilities for next-generation devices and circuits. Here, enhancement-mode (E-mode, remaining off state at zero gate voltages) carbon nanotube (CNT) complementary metal-oxide-semiconductor (CMOS) thin-film transistors (TFTs) are built on paper substrates through a printing-based process. Benefitting from the CMOS circuit style and E-mode transistors, the fabricated CMOS inverters exhibit high voltage gains (more than 11) and noise margins (up to 75% 1/2 VDD at VDD of 0.4 V), and rail-to-rail operation down to a VDD as low as 0.2 V and record low power dissipation as low as 0.0124 pW μm-1 . Furthermore, the transistors and integrated circuits (ICs) show an excellent radiation tolerance of a total ionizing dose (TID) exceeding 2 Mrad with a high dose rate of 365 rad s-1 . The record power consumption and outstanding radiation tolerance behavior achieved in paper-based and easy-to-process CNT electronics are attractive for emerging energy-saving and environmentally friendly ICs in harsh environment (such as outer-space) applications.
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