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Nanoscale phase separation in the oxide layer at GeTe (111) surfaces.

Alexander S Frolov1,2, Carolien Callaert3, Maria Batuk3

  • 1Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119991 Moscow, Russia. yashina@inorg.chem.msu.ru.

Nanoscale
|August 31, 2022
PubMed
Summary

Germanium telluride (GeTe) oxidation reveals nanoscale phase separation of germanium dioxide (GeO2) and tellurium (Te). This unusual behavior in semiconductors is linked to GeTe

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Surface Chemistry

Background:

  • Germanium telluride (GeTe) is a semiconductor ferroelectric with applications in thermoelectrics and data storage.
  • Recent discovery of giant Rashba splitting has renewed interest in GeTe.
  • Surface oxidation stability is crucial for GeTe device processing and operation.

Purpose of the Study:

  • Investigate the reaction kinetics and oxide layer structure of GeTe (111) surfaces upon exposure to molecular oxygen.
  • Understand the influence of ferroelectric properties and domain structure on oxidation behavior.

Main Methods:

  • Ex situ and in situ Near Ambient Pressure X-ray Photoelectron Spectroscopy (NAP XPS) for reaction kinetics.
  • High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) for structural analysis.
  • Scanning Transmission Electron Energy-Dispersive X-ray Spectroscopy (STEM-EDX) for elemental mapping.

Main Results:

  • Observed nanoscale phase separation of GeO2 and Te in the oxide layer, an unusual phenomenon for semiconductors.
  • Evaluated reaction kinetics of GeTe oxidation under controlled oxygen exposure.
  • Characterized the detailed structure of the oxide layer formed on GeTe (111).

Conclusions:

  • The observed nanoscale phase separation of GeO2 and Te is potentially linked to the ferroelectric properties and domain structure of GeTe.
  • Findings provide insights into the surface chemistry and oxidation mechanisms of GeTe.
  • Understanding these oxidation behaviors is critical for the development of GeTe-based devices.