Related Experiment Video
Updated: Jul 25, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Sensitivity Analysis of ReaxFF Potential: The Case of Si/O System
Evangelos Voyiatzis1, Roman Stepanyan1
1DSM, Applied Science Center, P.O. Box 1066, 6160 BB Geleen, The Netherlands.
Abstract:
Sensitivity analysis of the ReaxFF potential for two Si and SiO2 systems has been carried out using the method of Morris. The goal is to identify the most important force field parameters for selected properties. Thus, a clearer physical interpretation for some of the parameters can be obtained while the ranking of the parameters per magnitude of sensitivity for each property facilitates the development of parametrizations with improved quality. The parameters related to the σ-bond and van der Waals interactions have the greatest influence on the properties of the cubic diamond Si phase. Counterintuitively, parameters which have an impact on mechanical properties, such as the ones for ππ-bonds, do not influence pressure and vice versa. For the β-cristobalite SiO2 phase, the Si-O cross-interaction parameters have stronger effect on all properties than the Si-Si and O-O elemental ones. This dependence is attributed to the tetrahedral structure of the SiO2 phase. Regarding the sensitivity measures, the mean of the absolute values of the elementary effect (EE) distribution correlates with the standard deviation of the EE distribution in all cases; it quantifies the sensitivity of a property on a parameter and the cross-correlation of the parameter with the other ones. The mean of the EE distribution has a poor performance and its use should be avoided. It is also argued that performing a sensitivity analysis before force field optimization might greatly enhance the efficiency of the optimization methods by considering a two-step procedure, where the most relevant parameters are optimized first.
More Related Videos
13:58Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
07:55Elemental-sensitive Detection of the Chemistry in Batteries through Soft X-ray Absorption Spectroscopy and Resonant Inelastic X-ray Scattering
Published on: April 17, 2018
Related Concept Videos
Thermal Sigmatropic Reactions: Overview
Sigmatropic shifts are classified based on an order term [i, j ], where i and j indicate the number of atoms across which each end of the σ bond migrates. Below are examples of a [3,3] sigmatropic shift in 1,5-hexadiene, referred to as...
Quantitative Aspects of Drug-Receptor Interaction