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Updated: Aug 30, 2025
09:10
Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
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Fundamental linewidth of an AlN microcavity Raman laser
Optics Letters
|September 1, 2022
Abstract:
Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived.
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A conventional Raman spectrophotometer includes a laser source, a sample holding system, a wavelength selector, and a detector.
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