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Integrated polarization mode interferometer in 220-nm silicon-on-insulator technology
Optics Letters
|September 1, 2022
Summary
This study presents a compact, high-efficiency polarization mode interferometer on a silicon-on-insulator platform. It achieves high sensitivity and low loss by utilizing two polarization modes within a single waveguide for sensing applications.
Area of Science:
- Photonics
- Integrated Optics
- Nanotechnology
Background:
- Interferometers are crucial for sensing, but often suffer from large footprints and complex operation.
- Silicon-on-insulator (SOI) platforms offer advantages for integrated photonic devices due to their material properties and fabrication compatibility.
Purpose of the Study:
- To design and demonstrate a compact, high-efficiency polarization mode interferometer (PMI) on a 220-nm SOI platform.
- To leverage dual polarization modes in a single waveguide for enhanced sensing performance.
Main Methods:
- Fabrication of a PMI using a 220-nm SOI platform with a 5-mm sensing region.
- Characterization of the device's optical performance, including excess loss and extinction ratio.
- Simulation of homogeneous bulk sensitivity.
Main Results:
- Achieved a compact device with low propagation losses and high sensitivity.
- Measured excess loss of 1.5 dB and an extinction ratio up to 30 dB.
- Simulated bulk sensitivity exceeding 8000 rad/RIU.
Conclusions:
- The developed PMI offers a small footprint, high efficiency, and excellent sensing capabilities.
- Integration with a 90° hybrid readout system enables single-wavelength operation with unambiguous phase shift detection.
- This technology is promising for advanced sensing applications requiring high sensitivity and compact design.
