Correlative Nanoscale Imaging of Strained hBN Spin Defects

Spin defects like the negatively charged boron vacancy color center (V_B) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on V_B color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the V_B luminescence is observed at creases, consistent with density functional theory calculations showing V_B migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.