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Updated: Aug 29, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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The Barrier's Heights and Its Inhomogeneities on Diamond Silicon Interfaces

Szymon Łoś1, Kazimierz Fabisiak2, Kazimierz Paprocki3

  • 1Institute of Mathematics and Physics, Bydgoszcz University of Science and Technology, Profesora Sylwestra Kaliskiego 7, 85796 Bydgoszcz, Poland.

Materials (Basel, Switzerland)
|September 9, 2022
PubMed

Keywords:
I-V characteristicsRaman spectroscopyXRDenergy barrier heightideality factorp-PCD/n-Si heterojunctionpolycrystalline diamond film

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